PART |
Description |
Maker |
1PS66SB63 1PS79SB63 |
5 V, 20 mA low C_d Schottky barrier diodes 5 V, 20 mA low Cd Schottky barrier diodes SILICON, MIXER DIODE From old datasheet system
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
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BAT54A-AE3-R BAT54C-AE3-R BAT54C-AL3-R BAT54S-AE3- |
SCHOTTKY BARRIER (DUAL) DIODES 肖特基(双)二极 SCHOTTKY BARRIER (DUAL) DIODES 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies] Comchip Technology
|
MA784 MA2Z784 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor]
|
MA3J745E MA3J745D MA745WA MA745WK |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
MA3Z793 MA793 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic PANASONIC[Panasonic Semiconductor]
|
BAT62-02L BAT62-02W BAT62-08S BAT62-07W BAT62-03W |
Latest Silicon Discretes - Schottky Diode for power leveling Schottky Diodes - Low barrier silicon RF Schottky diode for detectors Schottky Diodes - Low barrier silicon RF Schottky diode array
|
Infineon
|
CDBURT0230L-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=35V, V-R=30V, I-O=0.2A Low Profile SMD Schottky Barrier Diode
|
Comchip Technology
|
HSB88WA |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
CDBQR0140R-HF12 CDBQR0140R-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=45V, V-R=40V, I-O=0.1A SMD Schottky Barrier Diode
|
Comchip Technology
|
SB0203EJ |
Small Signal Schottky Barrier Diodes Schottky Barrier Diode 30V, 200mA Rectifier
|
Sanyo Semiconductor Sanyo Semicon Device
|
SB1003EJ |
Small Signal Schottky Barrier Diodes SCHOTTKY BARRIER DIODE 30V, 1A RECTIFIER
|
SANYO[Sanyo Semicon Device]
|
BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors PHILIPS[Philips Semiconductors]
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